GaN transistors require a negative bias for correct operation as an amplifier, their chemical composition makes them ideal candidates for power amplification in the microwave spectrum. It is important to monitor and control their required biasing currents to achieve optimal power conversion.
The GaN RF module, has been designed to meet these needs by exploiting the use of software based monitoring and control. By employing an automatic gain control module embedded within the bias control unit, GaN RF amplifiers can operate at their maximum potential by minimizing the reflected power across the output stage
This product uses peripheral modules to monitor the amplifiers output power, return power loss, bias voltage and current, as well as the GaN’s operating temperature to control the gain at a suitable level.